教师名录
冯雪葳 助理教授
所在系所制造技术与装备自动化研究所
办公电话
通讯地址
电子邮件fengxw@sjtu.edu.cn
个人主页
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教育背景
学士，电子科学与技术，电子科技大学 2011.09-2015.07
博士, 电子与计算机系，新加坡国立大学 2015.08-2019.07
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工作经历
博士后，电子与计算机系，新加坡国立大学 2019.08-2020.10
助理教授，机械与动力工程学院，上海交通大学 2020.11-至今 -
研究方向
低维纳米材料电子器件
三维打印技术与柔性电子器件
新型存储器件与神经元计算
微型机器人 -
代表性论文专著
1. X. Feng, S. Li, S. L. Wong, S. Tong, L. Chen, P. Zhang, L. Wang, X. Fong, D. Chi, and K.-W. Ang, "Self-selective multi-terminal memtransistor crossbar array for in-memory computing," ACS Nano 15(1), 1764-1774 (2021).
2. X. Feng, X. Liu and K.-W. Ang, "2D Photonic Memristor: Progress and Prospects", Nanophotonics 9(7), 1579-1599 (2020).
3. X. Feng, Y. Li, L. Wang, S. Chen, Z. G. Yu, W. C. Tan, N. Macadam, G. Hu, L. Huang, L. Chen, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "A fully-printed flexible MoS2 memristive artificial synapse with sub-femto joules switching energy," Advanced Electronic Materials 5, 1900740 (2019). (封面文章)
4. X. Feng, Y. Li, L. Wang, Z. G. Yu, S. Chen, W. C. Tan, N. Macadam, G. Hu, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "First demonstration of a fully-printed MoS2 RRAM on flexible substrate with ultra-low switching voltage and its application as electronic synapse," 2019 Symposium on VLSI Technology (VLSI), Kyoto, Japan, Jun. 9-14, 2019. (最佳展示论文奖)
5. X. Feng, X. Huang, L. Chen, W. C. Tan, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor," Advanced Functional Materials 28, 1801524 (2018).
6. X. Feng, L. Wang, X. Huang, L. Chen, and K.-W. Ang, "Complementary black phosphorus nanoribbons field-effect transistors and circuits," IEEE Transactions on Electron Devices 65, 4122-4128 (2018). (封面文章)
7. X. Feng, X. Huang, L. Chen, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor: Impact of crystal orientation, dimension scaling and hydrogen anneal," 2018 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 9-13, 2018.
8. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric," Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.
9. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study," Nano Research 9 (9), 2687-2695 (2016).
