2011.09-2015.07      电子科技大学  ，电子科学与技术，学士  
2015.08-2019.07     新加坡国立大学 ，电子与计算机系，博士

2019.08-2020.10    新加坡国立大学 ，电子与计算机系，博士后

2020.11-至今         上海交通大学，机械与动力工程学院，助理教授、副教授

二维材料电子器件与集成电路
三维打印技术与柔性电子器件
人工智能芯片

2026年度有2个硕士名额，请对电子器件、集成电路、人工智能及与机械动力学科交叉感兴趣的同学积极联系，将CV发至fengxw@sjtu.edu.cn

2020-至今      全国重点实验室专项项目，核心骨干

2024-2026     国家自然科学基金青年科学基金：自整流二维忆阻晶体管器件，负责人

2025-2026     企业委托：新型存算一体芯片，负责人

2025-2027     上海市科技创新行动集成电路专项：极微缩二维晶体管器件，负责人

代表论文：

1. T. Tan, H. Guo, S. Wang, Y. Wang, Y. Li, and X. Feng*,"Multi-Stage Kalman Filtering System for Sensor Fusion Integrated with MoS2 Memtransistor Featuring 1024 Conductance Levels," npj 2D Materials and Applications, 2026. 

2. T. Tan, Q. Xu, and X. Feng*, "The rise of two-dimensional materials based memtransistors for neuromorphic computing," Chip, 2025. (特邀综述)

3. T. Tan, M. Sivan, K. Zhou, H. Guo, Y. Wu, L. Sun, Y. Li* and X. Feng*, "Self-Rectifying MoS2 Memtransistor via Asymmetry Contact Metal Engineering for Neuromorphic Computing," Small, 2503716 (2025). (Editor's Choice) (IF: 13)

4. W. Wang, T. Zhang, Z. Yuan, H. Peng, J. Lan, Z. Li, Y. Wu, X. Feng, L. Lin, F.Zhou, P. Zhang, Y. Li “ Device to Circuit Co-Design Utilizing High-Performance PEALD Indium-Gallium-Zinc Oxide Thin-Film Transistor Enabling Technology Node Scaling in Monolithic 3D Systems.” Advanced Science, e10551 (2025)

5. J. Lu, Z. Yuan, J. Lan, X. Feng, T. Tan, L. Lin, F. Zhou, Y. Li, "Oxide-based CMOS Logic Circuits Enabled by Monolithically 3D Stacked SnOx p-FET and IGZO n-FET with Matched Threshold Voltage," IEEE Electron Device Letters (2025)

6. T. Tan, H. Guo, Y. Li, Y. Wang. W. Cai, W. Bao*, P. Zhou* and X. Feng*,"Integration of MoS2 Memtransistor Devices and Analog Circuits for Sensor Fusion in Autonomous Vehicle Target Localization, " ACS Nano, 18, 13652 (2024) .(IF: 17.10)

7. W. Zhu, Y. Li and X. Feng*; Quantification of the sheet resistance between two-dimensional semiconductors and semi-metals by a contact-end-resistance method, Applied Physics Letters, 124, 073101 (2024). (IF: 3.971)

8. X. Feng*, Z. G. Yu, H. Guo, Y. Li, Y.-W. Zhang and K.-W. Ang*, "Direct Observation of Semimetal Contact Induced Charge Doping and Strain Effect in CVD-Grown Monolayer MoS₂ Transistors," Advanced Electronic Materials 2300820 (2024). (IF: 6.65)

9. J. Lu; M. Shen; X. Feng; T. Tan; H. Guo; L. Lin; F. Zhou; Y. Li, p-Type Oxide Thin-Film Transistor with Unprecedented Hole Field-Effect Mobility for an All-Oxide CMOS CFET-like Inverter Suitable for Monolithic 3D Integration. Nano Letters 2024, 24 (48), 15260-15267.

10. W. Wang, K. Li, J. Lan, M.Shen, Z. Wang, X. Feng, H. Yu, K. Chen, J. Li, F. Zhou, L. Lin, P. Zhang, Y. Li, CMOS backend-of-line compatible memory array and logic circuitries enabled by high performance atomic layer deposited ZnO thin-film transistor. Nature Communications 14, 6079 (2023)

11. P. Zhang, X. Feng and X. Fong, "Impact of Trap Profile on the Characteristics of 2-D MoS2 Memtransistors: A Simulation Study," in IEEE Transactions on Electron Devices, 69(8), 4750-4756 (2022) （IF:3.220）

12. X. Feng, and K.-W. Ang, "Self-selective monolayer MoS2 memtransistor crossbar array for in-memory computing applications," 2022 International Conference on Solid State Devices and Materials, Chiba, Japan, Sep. 26-29, 2022.

13. Y.-C. Chien#, X. Feng#, Li Chen# et al., “Charge carrier mobility and series resistance extraction in two-dimensional field-effect transistors: Towards the universal technique,” Advanced Functional Materials 31, 2105003 (2021). （共同一作) （IF=18.808）
14. X. Feng, S. Li, S. L. Wong, S. Tong, L. Chen, P. Zhang, L. Wang, X. Fong, D. Chi, and K.-W. Ang, "Self-selective multi-terminal memtransistor crossbar array for in-memory computing," ACS Nano 15(1), 1764-1774 (2021). (IF: 17.10).

15. S. Li, B. Li, X. Feng et al. Electron-beam-irradiated rhenium disulfide memristors with low variability for neuromorphic computing. npj 2D Materials and Applications 5, 1 (2021). (IF=11.440)
16. X. Feng, X. Liu and K.-W. Ang, "2D Photonic Memristor: Progress and Prospects", Nanophotonics 9(7), 1579-1599 (2020). (IF: 9.690)

17. Y. Li, X.Feng, M. Sivan et al., "Aerosol Jet Printed WSe2 Crossbar Architecture Device on Kapton With Dual Functionality as Resistive Memory and Photosensor for Flexible System Integration," IEEE Sensors Journal, 20, 4653-4659, 2020. (IF=3.980)

18. X. Feng, Y. Li, L. Wang, Z. G. Yu, S. Chen, W. C. Tan, N. Macadam, G. Hu, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "First demonstration of a fully-printed MoS2 RRAM on flexible substrate with ultra-low switching voltage and its application as electronic synapse," 2019 Symposium on VLSI Technology (VLSI), Kyoto, Japan, Jun. 9-14, 2019. (最佳展示论文奖)
19. X. Feng, Y. Li, L. Wang, S. Chen, Z. G. Yu, W. C. Tan, N. Macadam, G. Hu, L. Huang, L. Chen, X. Gong, T. Hasan, Y.-W. Zhang, A. V.-Y. Thean, and K.-W. Ang, "A fully-printed flexible MoS2 memristive artificial synapse with sub-femto joules switching energy," Advanced Electronic Materials 5, 1900740 (2019). (封面文章) （IF:7.295)

20. L. Chen, D. Liang, Z. Yu, S. Li, X. Feng et al., "Ultrasensitive flexible strain sensor based on two-dimensional InSe for human motion surveillance," 65th IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 7-11, 2019.
21. X. Feng, X. Huang, L. Chen, W. C. Tan, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor," Advanced Functional Materials 28, 1801524 (2018). （IF=18.808）
22. X. Feng, L. Wang, X. Huang, L. Chen, and K.-W. Ang, "Complementary black phosphorus nanoribbons field-effect transistors and circuits," IEEE Transactions on Electron Devices 65, 4122-4128 (2018). (封面文章) （IF:3.220）

23. X. Feng, X. Huang, L. Chen, L. Wang, and K.-W. Ang, "High mobility anisotropic black phosphorus nanoribbons field-effect transistor: Impact of crystal orientation, dimension scaling and hydrogen anneal," 2018 International Conference on Solid State Devices and Materials (SSDM), Tokyo, Japan, Sep. 9-13, 2018.

24. L. Wang, Y. Li, X. Feng et al., "A unified surface potential based physical compact model for both unipolar and ambipolar 2D-FET: Experimental verification and circuit demonstration," 63rd IEEE International Electron Devices Meeting (IEDM), San Francisco, USA, Dec. 2-6, 2017.

25. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Adatoms Doping Effects on the Thermal Stability of Black Phosphorus formed on High-k Gate Dielectric," Materials Research Society (MRS) Spring Meeting, Arizona, USA, Apr. 17-21, 2017.
26. X. Feng, V. V. Kulish, P. Wu, X. Liu, and K.-W. Ang, "Anomalously enhanced thermal stability of phosphorene via metal adatoms doping: An experimental and first-principles study," Nano Research 9 (9), 2687-2695 (2016). (IF: 8.897)

27. Z.-P. Ling, X. Feng, H. Jiang et al., "Black phosphorus transistors with enhanced hole transport and subthreshold swing using ultra-thin HfO2 high-k gate dielectric," IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, USA, Jun. 12-13, 2016.

1.    U.S. Patent App. 17/521,347, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 8, 2021.
2.    SG Patent App. 10,202,111,860W, "A Self-Selective Multi-Terminal Memtransistor For Crossbar Array Circuits," Xuewei Feng, Kah-Wee Ang, File Date: Nov. 10, 2020.